Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI4310BDY-T1-E3
Part Number | SI4310BDY-T1-E3 |
Datasheet | SI4310BDY-T1-E3 datasheet |
Description | MOSFET 2N-CH 30V 7.5A 14SOIC |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 7.5A, 9.8A |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2370pF @ 15V |
Power - Max | 1.14W, 1.47W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 14-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 14-SOIC |