Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRLR3636PBF
Part Number | IRLR3636PBF |
Datasheet | IRLR3636PBF datasheet |
Description | MOSFET N-CH 60V 50A D-PAK |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Discontinued at Digi-Key |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 4.5V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 3779pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 143W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |