Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RZY200P01TL
Part Number | RZY200P01TL |
Datasheet | RZY200P01TL datasheet |
Description | MOSFET P-CH 12V 20A TCPT3 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 20W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TCPT3 |
Package / Case | 3-SMD, Flat Leads |