Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP80N06S2L06AKSA2
Part Number | IPP80N06S2L06AKSA2 |
Datasheet | IPP80N06S2L06AKSA2 datasheet |
Description | MOSFET N-CH 55V 80A TO220-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 69A, 10V |
Vgs(th) (Max) @ Id | 2V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3800pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |