Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQT4N25TF
Part Number | FQT4N25TF |
Datasheet | FQT4N25TF datasheet |
Description | MOSFET N-CH 250V 0.83A SOT-223 |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 830mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.75 Ohm @ 415mA, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223-4 |
Package / Case | TO-261-4, TO-261AA |