
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI2302DS,215

| Part Number | SI2302DS,215 |
| Datasheet | SI2302DS,215 datasheet |
| Description | MOSFET N-CH 20V 2.5A SOT23 |
| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 3.6A, 4.5V |
| Vgs(th) (Max) @ Id | 650mV @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB (SOT23) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |