Product Introduction
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Product Specifications
Part Number |
TK9J90E,S1E |
Description |
MOSFET N-CH 900V TO-3PN |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
900V |
Current - Continuous Drain (Id) @ 25°C |
9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
1.3 Ohm @ 4.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs |
46nC @ 10V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
250W (Tc) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-3P(N) |
Package / Case |
TO-3P-3, SC-65-3 |
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