Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / EMZ1DXV6T1G
Part Number | EMZ1DXV6T1G |
Datasheet | EMZ1DXV6T1G datasheet |
Description | TRANS NPN/PNP 60V 0.1A SOT563 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
Power - Max | 500mW |
Frequency - Transition | 180MHz, 140MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |