Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DRA2123J0L

Product Introduction

DRA2123J0L

Part Number
DRA2123J0L
Manufacturer/Brand
Panasonic Electronic Components
Description
TRANS PREBIAS PNP 200MW MINI3
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
11pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number DRA2123J0L
Datasheet DRA2123J0L datasheet
Description TRANS PREBIAS PNP 200MW MINI3
Manufacturer Panasonic Electronic Components
Series -
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package Mini3-G3-B

Latest Products for Transistors - Bipolar (BJT) - Single, Pre-Biased

FJN3303RTA

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

FJN3304RTA

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

FJN3306RTA

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

FJN3307RTA

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

FJN3308RTA

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

FJN3309RTA

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3