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Product Introduction

SPB21N10 G

Part Number
SPB21N10 G
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 100V 21A D2PAK
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
SIPMOS®
Quantity
8990pcs Stock Available.

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Product Specifications

Part Number SPB21N10 G
Datasheet SPB21N10 G datasheet
Description MOSFET N-CH 100V 21A D2PAK
Manufacturer Infineon Technologies
Series SIPMOS®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs 38.4nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 865pF @ 25V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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