Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SB906-Y(TE16L1,NQ

Product Introduction

2SB906-Y(TE16L1,NQ

Part Number
2SB906-Y(TE16L1,NQ
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS PNP 60V 3A PW-MOLD
Category
Transistors - Bipolar (BJT) - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
16pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number 2SB906-Y(TE16L1,NQ
Description TRANS PNP 60V 3A PW-MOLD
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 5V
Power - Max 1W
Frequency - Transition 9MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PW-MOLD

Latest Products for Transistors - Bipolar (BJT) - Single

PN4121_D74Z

ON Semiconductor

TRANS PNP 40V 0.1A TO92

PN4122_D27Z

ON Semiconductor

TRANS PNP 40V 0.1A TO-92

PN4249_D26Z

ON Semiconductor

TRANS PNP 60V 0.5A TO-92

PN4249_D74Z

ON Semiconductor

TRANS PNP 60V 0.5A TO-92

PN4249_D75Z

ON Semiconductor

TRANS PNP 60V 0.5A TO-92

PN4250A_D27Z

ON Semiconductor

TRANS PNP 60V 0.5A TO-92