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Part Number | APTM100A46FT1G |
Datasheet | APTM100A46FT1G datasheet |
Description | MOSFET 2N-CH 1000V 19A SP1 |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Obsolete |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 19A |
Rds On (Max) @ Id, Vgs | 552 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 25V |
Power - Max | 357W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP1 |
Supplier Device Package | SP1 |