Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXCY01N90E

Product Introduction

IXCY01N90E

Part Number
IXCY01N90E
Manufacturer/Brand
IXYS
Description
MOSFET N-CH 900V 0.25A TO-252
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
5985pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IXCY01N90E
Description MOSFET N-CH 900V 0.25A TO-252
Manufacturer IXYS
Series -
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80 Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 133pF @ 25V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Latest Products for Transistors - FETs, MOSFETs - Single

IRLR3715

Infineon Technologies

MOSFET N-CH 20V 54A DPAK

IRLR3715PBF

Infineon Technologies

MOSFET N-CH 20V 54A DPAK

IRLR3715TR

Infineon Technologies

MOSFET N-CH 20V 54A DPAK

IRLR3715TRL

Infineon Technologies

MOSFET N-CH 20V 54A DPAK

IRLR3715TRLPBF

Infineon Technologies

MOSFET N-CH 20V 54A DPAK

IRLR3715TRPBF

Infineon Technologies

MOSFET N-CH 20V 54A DPAK

Related Products