Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTD513ZMT2L

Product Introduction

DTD513ZMT2L

Part Number
DTD513ZMT2L
Manufacturer/Brand
Rohm Semiconductor
Description
TRANS PREBIAS NPN 150MW VMT3
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
7pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number DTD513ZMT2L
Description TRANS PREBIAS NPN 150MW VMT3
Manufacturer Rohm Semiconductor
Series -
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 12V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 260MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VMT3

Latest Products for Transistors - Bipolar (BJT) - Single, Pre-Biased

RN2102CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

RN2103CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

RN2104ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

RN2104CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

RN2105CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

RN2106CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3