Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSP135 E6327
Part Number | BSP135 E6327 |
Datasheet | BSP135 E6327 datasheet |
Description | MOSFET N-CH 600V 120MA SOT-223 |
Manufacturer | Infineon Technologies |
Series | SIPMOS® |
Part Status | Discontinued at Digi-Key |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
Rds On (Max) @ Id, Vgs | 45 Ohm @ 120mA, 10V |
Vgs(th) (Max) @ Id | 1V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 146pF @ 25V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 1.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |