Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / APT80SM120S
Part Number | APT80SM120S |
Datasheet | APT80SM120S datasheet |
Description | POWER MOSFET - SIC |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 235nC @ 20V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 625W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D3Pak |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |