Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQU4N20TU
Part Number | FQU4N20TU |
Datasheet | FQU4N20TU datasheet |
Description | MOSFET N-CH 200V 3A IPAK |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |