Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
BUZ31 |
Datasheet |
BUZ31 datasheet |
Description |
MOSFET N-CH 200V 14.5A TO220AB |
Manufacturer |
Infineon Technologies |
Series |
SIPMOS® |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200V |
Current - Continuous Drain (Id) @ 25°C |
14.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
200 mOhm @ 9A, 5V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
- |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1120pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
95W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO220-3 |
Package / Case |
TO-220-3 |
Latest Products for Transistors - FETs, MOSFETs - Single
Infineon Technologies
MOSFET P-CH 60V 80A TO-220
Infineon Technologies
MOSFET N-CH TO220-3
Infineon Technologies
MOSFET N-CH 900V 5.1A TO-220
Infineon Technologies
MOSFET N-CH 250V 17A TO-220
Infineon Technologies
MOSFET N-CH 100V 80A TO220-3
Infineon Technologies
MOSFET N-CH 100V 70A TO220-3