Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT25GP90BDQ1G
Product Introduction
APT25GP90BDQ1G
- Part Number
- APT25GP90BDQ1G
- Manufacturer/Brand
- Microsemi Corporation
- Description
- IGBT 900V 72A 417W TO247
- Category
- Transistors - IGBTs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- POWER MOS 7®
- Quantity
- 451pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | APT25GP90BDQ1G |
| Datasheet | APT25GP90BDQ1G datasheet |
| Description | IGBT 900V 72A 417W TO247 |
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| Part Status | Not For New Designs |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Current - Collector (Ic) (Max) | 72A |
| Current - Collector Pulsed (Icm) | 110A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
| Power - Max | 417W |
| Switching Energy | 370µJ (off) |
| Input Type | Standard |
| Gate Charge | 110nC |
| Td (on/off) @ 25°C | 13ns/55ns |
| Test Condition | 600V, 40A, 4.3 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
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