Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / ULN2803APG,CN
Part Number | ULN2803APG,CN |
Datasheet | ULN2803APG,CN datasheet |
Description | TRANS 8NPN DARL 50V 0.5A 18DIP |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
Transistor Type | 8 NPN Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
Power - Max | 1.47W |
Frequency - Transition | - |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Through Hole |
Package / Case | 18-DIP (0.300", 7.62mm) |
Supplier Device Package | 18-DIP |