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| Part Number | 1SS307E,L3F |
| Datasheet | 1SS307E,L3F datasheet |
| Description | DIODE GEN PURP 80V 100MA SC79 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) | 100mA |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 100mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10nA @ 80V |
| Capacitance @ Vr, F | 6pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-79, SOD-523 |
| Supplier Device Package | SC-79 |
| Operating Temperature - Junction | 150°C (Max) |