Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTY2N100P
Part Number | IXTY2N100P |
Datasheet | IXTY2N100P datasheet |
Description | MOSFET N-CH 1000V 2A TO-252 |
Manufacturer | IXYS |
Series | Polar™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 24.3nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 655pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 86W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |