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Product Introduction

SCTW90N65G2V

Part Number
SCTW90N65G2V
Manufacturer/Brand
STMicroelectronics
Description
SILICON CARBIDE POWER MOSFET 650
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
20pcs Stock Available.

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Product Specifications

Part Number SCTW90N65G2V
Description SILICON CARBIDE POWER MOSFET 650
Manufacturer STMicroelectronics
Series -
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 25 mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 157nC @ 18V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 400V
FET Feature -
Power Dissipation (Max) 390W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3

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