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Product Introduction
SCTW90N65G2V
- Part Number
- SCTW90N65G2V
- Manufacturer/Brand
- STMicroelectronics
- Description
- SILICON CARBIDE POWER MOSFET 650
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 20pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SCTW90N65G2V |
| Description | SILICON CARBIDE POWER MOSFET 650 |
| Manufacturer | STMicroelectronics |
| Series | - |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 157nC @ 18V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ |
| Package / Case | TO-247-3 |
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