Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIS990DN-T1-GE3
Part Number | SIS990DN-T1-GE3 |
Datasheet | SIS990DN-T1-GE3 datasheet |
Description | MOSFET 2N-CH 100V 12.1A 1212-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 12.1A |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 50V |
Power - Max | 25W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 Dual |
Supplier Device Package | PowerPAK® 1212-8 Dual |