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Product Introduction

IPB049NE7N3GATMA1

Part Number
IPB049NE7N3GATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 75V 80A TO263-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
1196pcs Stock Available.

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Product Specifications

Part Number IPB049NE7N3GATMA1
Datasheet IPB049NE7N3GATMA1 datasheet
Description MOSFET N-CH 75V 80A TO263-3
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.9 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 37.5V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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