Product Introduction
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Product Specifications
Part Number |
IRF6644 |
Datasheet |
IRF6644 datasheet |
Description |
MOSFET N-CH 100V DIRECTFET-MN |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
10.3A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
13 mOhm @ 10.3A, 10V |
Vgs(th) (Max) @ Id |
4.8V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
2210pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
2.8W (Ta), 89W (Tc) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DIRECTFET™ MN |
Package / Case |
DirectFET™ Isometric MN |
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