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Product Introduction

FQI4N80TU

Part Number
FQI4N80TU
Manufacturer/Brand
ON Semiconductor
Description
MOSFET N-CH 800V 3.9A I2PAK
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
QFET®
Quantity
1476pcs Stock Available.

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Product Specifications

Part Number FQI4N80TU
Description MOSFET N-CH 800V 3.9A I2PAK
Manufacturer ON Semiconductor
Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6 Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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