Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDB13AN06A0
Part Number | FDB13AN06A0 |
Datasheet | FDB13AN06A0 datasheet |
Description | MOSFET N-CH 60V 62A TO-263AB |
Manufacturer | ON Semiconductor |
Series | PowerTrench® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 10.9A (Ta), 62A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 62A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 115W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |