Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BC857C/DG/B3,215
Part Number | BC857C/DG/B3,215 |
Datasheet | BC857C/DG/B3,215 datasheet |
Description | TRANS GEN PURPOSE TO-236AB |
Manufacturer | Nexperia USA Inc. |
Series | - |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
Power - Max | 250mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB |