Product Introduction
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Product Specifications
Part Number |
EPC2007 |
Datasheet |
EPC2007 datasheet |
Description |
GANFET TRANS 100V 6A BUMPED DIE |
Manufacturer |
EPC |
Series |
eGaN® |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
30 mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs |
2.8nC @ 5V |
Vgs (Max) |
+6V, -5V |
Input Capacitance (Ciss) (Max) @ Vds |
205pF @ 50V |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
-40°C ~ 125°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
Die Outline (5-Solder Bar) |
Package / Case |
Die |
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