Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NDT01N60T1G
Part Number | NDT01N60T1G |
Datasheet | NDT01N60T1G datasheet |
Description | MOSFET N-CH 600V 0.4A SOT223 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8.5 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 (TO-261) |
Package / Case | TO-261-4, TO-261AA |