Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB041N04NGATMA1
Part Number | IPB041N04NGATMA1 |
Datasheet | IPB041N04NGATMA1 datasheet |
Description | MOSFET N-CH 40V 80A TO263-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.1 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 45µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 94W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |