Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFN60N60
Part Number | IXFN60N60 |
Datasheet | IXFN60N60 datasheet |
Description | MOSFET N-CH 600V 60A SOT-227B |
Manufacturer | IXYS |
Series | HiPerFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 380nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 15000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 700W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |