Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MS2210

Product Introduction

MS2210

Part Number
MS2210
Manufacturer/Brand
Microsemi Corporation
Description
RF TRANS NPN 65V 1.215GHZ M216
Category
Transistors - Bipolar (BJT) - RF
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
12pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number MS2210
Datasheet MS2210 datasheet
Description RF TRANS NPN 65V 1.215GHZ M216
Manufacturer Microsemi Corporation
Series -
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Frequency - Transition 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f) -
Gain 7dB
Power - Max 940W
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 5A, 5V
Current - Collector (Ic) (Max) 24A
Operating Temperature 200°C (TJ)
Mounting Type Chassis Mount
Package / Case M216
Supplier Device Package M216

Latest Products for Transistors - Bipolar (BJT) - RF

BFP720FESDH6327XTSA1

Infineon Technologies

RF TRANS NPN 4.7V 45GHZ 4TSFP

BFP720FH6327XTSA1

Infineon Technologies

RF TRANS NPN 4.7V 45GHZ 4TSFP

BFP 405F E6327

Infineon Technologies

RF TRANS NPN 5V 25GHZ 4TSFP

BFP 420F E6327

Infineon Technologies

RF TRANS NPN 5V 25GHZ 4TSFP

BFP 520F E6327

Infineon Technologies

RF TRANS NPN 3.5V 45GHZ 4TSFP

BFP 540F E6327

Infineon Technologies

RF TRANS NPN 5V 30GHZ 4TSFP