Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / APT50GR120JD30

Product Introduction

APT50GR120JD30

Part Number
APT50GR120JD30
Manufacturer/Brand
Microsemi Corporation
Description
IGBT 1200V 84A 417W SOT227
Category
Transistors - IGBTs - Modules
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
9792pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number APT50GR120JD30
Datasheet APT50GR120JD30 datasheet
Description IGBT 1200V 84A 417W SOT227
Manufacturer Microsemi Corporation
Series -
Part Status Active
IGBT Type NPT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 84A
Power - Max 417W
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 50A
Current - Collector Cutoff (Max) 1.1mA
Input Capacitance (Cies) @ Vce 5.55nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4
Supplier Device Package SOT-227

Latest Products for Transistors - IGBTs - Modules

VS-GB75DA120UP

Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

VS-GB75SA120UP

Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

VS-GT100DA120U

Vishay Semiconductor Diodes Division

IGBT 1200V 258A 893W SOT-227

VS-GT100DA60U

Vishay Semiconductor Diodes Division

IGBT 600V 184A 577W SOT-227

VS-GT100LA120UX

Vishay Semiconductor Diodes Division

IGBT 1200V 134A 463W SOT-227

VS-GT100NA120UX

Vishay Semiconductor Diodes Division

IGBT 1200V 134A 463W SOT-227