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| Part Number | HS1DL RQG |
| Datasheet | HS1DL RQG datasheet |
| Description | DIODE GEN PURP 200V 1A SUB SMA |
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 950mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 5µA @ 200V |
| Capacitance @ Vr, F | 20pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-219AB |
| Supplier Device Package | Sub SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |