Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / APTM100H45STG
Part Number | APTM100H45STG |
Datasheet | APTM100H45STG datasheet |
Description | MOSFET 4N-CH 1000V 18A SP4 |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
FET Type | 4 N-Channel (H-Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 18A |
Rds On (Max) @ Id, Vgs | 540 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 154nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4350pF @ 25V |
Power - Max | 357W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP4 |
Supplier Device Package | SP4 |