Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SUD50N03-09P-GE3
Part Number | SUD50N03-09P-GE3 |
Datasheet | SUD50N03-09P-GE3 datasheet |
Description | MOSFET N-CH 30V 63A TO252 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 7.5W (Ta), 65.2W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |