Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / BCR555E6433HTMA1
Part Number | BCR555E6433HTMA1 |
Datasheet | BCR555E6433HTMA1 datasheet |
Description | TRANS PREBIAS PNP 300MW SOT23-3 |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Last Time Buy |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 150MHz |
Power - Max | 330mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |