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Part Number | IPD60R380P6ATMA1 |
Datasheet | IPD60R380P6ATMA1 datasheet |
Description | MOSFET N-CH 600V DPAK-3 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ P6 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 320µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 877pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |