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Product Introduction

TK39J60W,S1VQ

Part Number
TK39J60W,S1VQ
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 600V 38.8A TO-3P
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
DTMOSIV
Quantity
153pcs Stock Available.

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Product Specifications

Part Number TK39J60W,S1VQ
Description MOSFET N-CH 600V 38.8A TO-3P
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65 mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
FET Feature Super Junction
Power Dissipation (Max) 270W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

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