Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
MS652S |
Datasheet |
MS652S datasheet |
Description |
RF TRANS NPN 16V 512MHZ M123 |
Manufacturer |
Microsemi Corporation |
Series |
- |
Part Status |
Obsolete |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
16V |
Frequency - Transition |
450MHz ~ 512MHz |
Noise Figure (dB Typ @ f) |
- |
Gain |
10dB |
Power - Max |
25W |
DC Current Gain (hFE) (Min) @ Ic, Vce |
10 @ 200mA, 5V |
Current - Collector (Ic) (Max) |
2A |
Operating Temperature |
200°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
M123 |
Supplier Device Package |
M123 |
Latest Products for Transistors - Bipolar (BJT) - RF
Microsemi Corporation
RF TRANS NPN 16V 470MHZ
Microsemi Corporation
RF TRANS NPN 16V 470MHZ
Microsemi Corporation
RF TRANS NPN 16V 870MHZ MACRO X
Microsemi Corporation
RF TRANS NPN 16V 870MHZ
Microsemi Corporation
RF TRANS NPN 16V 870MHZ
Microsemi Corporation
TRANS NPN 15V 200MA