Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STH185N10F3-6
Part Number | STH185N10F3-6 |
Datasheet | STH185N10F3-6 datasheet |
Description | MOSFET N-CH 100V 180A H2PAK-6 |
Manufacturer | STMicroelectronics |
Series | Automotive, AEC-Q101, STripFET™ F3 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 114.6nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6665pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 315W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | H2PAK-6 |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |