Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT45GP120B2DQ2G
Part Number | APT45GP120B2DQ2G |
Datasheet | APT45GP120B2DQ2G datasheet |
Description | IGBT 1200V 113A 625W TMAX |
Manufacturer | Microsemi Corporation |
Series | POWER MOS 7® |
Part Status | Active |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 113A |
Current - Collector Pulsed (Icm) | 170A |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A |
Power - Max | 625W |
Switching Energy | 900µJ (on), 905µJ (off) |
Input Type | Standard |
Gate Charge | 185nC |
Td (on/off) @ 25°C | 18ns/100ns |
Test Condition | 600V, 45A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |