Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI3909DV-T1-GE3
Part Number | SI3909DV-T1-GE3 |
Datasheet | SI3909DV-T1-GE3 datasheet |
Description | MOSFET 2P-CH 20V 6TSOP |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.8A, 4.5V |
Vgs(th) (Max) @ Id | 500mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.15W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |