Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIHG32N50D-GE3
Part Number | SIHG32N50D-GE3 |
Datasheet | SIHG32N50D-GE3 datasheet |
Description | MOSFET N-CH 500V 30A TO-247AC |
Manufacturer | Vishay Siliconix |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2550pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 390W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |