Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BSM200GA120DN2HOSA1

Product Introduction

BSM200GA120DN2HOSA1

Part Number
BSM200GA120DN2HOSA1
Manufacturer/Brand
Infineon Technologies
Description
IGBT 2 MED POWER 62MM-2
Category
Transistors - IGBTs - Modules
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
3953pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number BSM200GA120DN2HOSA1
Description IGBT 2 MED POWER 62MM-2
Manufacturer Infineon Technologies
Series -
Part Status Not For New Designs
IGBT Type -
Configuration Single Switch
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 300A
Power - Max 1550W
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 200A
Current - Collector Cutoff (Max) 4mA
Input Capacitance (Cies) @ Vce 13nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

Latest Products for Transistors - IGBTs - Modules

APTGT25H120T1G

Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP1

APTGT25SK120D1G

Microsemi Corporation

IGBT 1200V 40A 140W D1

APTGT300DA120D3G

Microsemi Corporation

IGBT 1200V 440A 1250W D3

APTGT300SK120D3G

Microsemi Corporation

IGBT 1200V 440A 1250W D3

APTGT300SK170D3G

Microsemi Corporation

IGBT 1700V 530A 1470W D3

APTGT30A170D1G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D1