Home / Products / Integrated Circuits (ICs) / Memory / TC58BYG0S3HBAI4

Product Introduction

TC58BYG0S3HBAI4

Part Number
TC58BYG0S3HBAI4
Manufacturer/Brand
Toshiba Memory America, Inc.
Description
1GB SLC NAND BGA 24NM I TEMP EE
Category
Memory
RoHs Status
Lead free / RoHS Compliant
Series
Benand™
Quantity
393pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number TC58BYG0S3HBAI4
Datasheet TC58BYG0S3HBAI4 datasheet
Description 1GB SLC NAND BGA 24NM I TEMP EE
Manufacturer Toshiba Memory America, Inc.
Series Benand™
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 1Gb (128M x 8)
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time -
Memory Interface -
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)

Latest Products for Memory

W25Q128FVCIF

Winbond Electronics

IC FLASH 128M SPI 24TFBGA

W25Q128FVCIG

Winbond Electronics

IC FLASH 128M SPI 24TFBGA

W25Q128FVCIG TR

Winbond Electronics

IC FLASH 128M SPI 24TFBGA

W25Q128FVCIP

Winbond Electronics

IC FLASH 128M SPI 24TFBGA

W25Q128FVCJF

Winbond Electronics

IC FLASH MEMORY 128MB

W25Q128FVCJF TR

Winbond Electronics

IC FLASH MEMORY 128MB