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Part Number | IRLMS2002 |
Datasheet | IRLMS2002 datasheet |
Description | MOSFET N-CH 20V 6.5A TSOP-6 |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | Micro6™(SOT23-6) |
Package / Case | SOT-23-6 |