Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI12CN10N G

Product Introduction

IPI12CN10N G

Part Number
IPI12CN10N G
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 100V 67A TO262-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
1583pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IPI12CN10N G
Datasheet IPI12CN10N G datasheet
Description MOSFET N-CH 100V 67A TO262-3
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12.9 mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4320pF @ 50V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

Latest Products for Transistors - FETs, MOSFETs - Single

SPW15N60C3FKSA1

Infineon Technologies

MOSFET N-CH 650V 15A TO-247

SPW15N60CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 13.4A TO-247

SPW17N80C3A

Infineon Technologies

MOSFET N-CH 800V 17A TO-247

SPW17N80C3FKSA1

Infineon Technologies

MOSFET N-CH 800V 17A TO-247

SPW20N60CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 20.7A TO-247

SPW20N60S5FKSA1

Infineon Technologies

MOSFET N-CH 600V 20A TO-247

Related Products